| PART |
Description |
Maker |
| HYM72V1645GU-60 HYM72V1645GU-50 HYM64V1645GU-60 HY |
3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module 3.3 16米x 64位江户内.3V6米x 72位江户记忆体模组
3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module 16M X 72 EDO DRAM MODULE, 60 ns, DMA168
3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module 16M X 64 EDO DRAM MODULE, 60 ns, DMA168
16M x 64 Bit DRAM Module unbuffered
16M x 72 Bit ECC DRAM Module unbuffered
|
SIEMENS A G
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| HYB3165400ATL-60 HYB3165400ATL-50 HYB3165400ATL-40 |
16M x 4 Bit 8k DRAM
16M x 4-Bit Dynamic RAM (4k & 8k Refresh)
From old datasheet system
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| HYB3165405AJ-40 HYB3164405AJ-40 HYB3164405AT-50 HY |
High-Speed Fully-Differential Amplifiers 8-SOIC 0 to 70
16M X 4 EDO DRAM, 40 ns, PDSO32 0.400 INCH, PLASTIC, SOJ-32
16M X 4 EDO DRAM, 40 ns, PDSO32 0.400 INCH, PLASTIC, TSOP2-32
16M x 4-Bit Dynamic RAM 16M X 4 EDO DRAM, 60 ns, PDSO32
16M x 4-Bit Dynamic RAM 16M X 4 EDO DRAM, 50 ns, PDSO32
|
SIEMENS AG
Infineon Technologies AG
|
| MC-4516DA726 |
16M-Word By72-BIT Dynamic RAM Module(16M×72位动态RAM模块)
|
NEC Corp.
|
| MC-4516CD646 |
16M-Word By 64-BIT Dynamic RAM Module(16M×64位动态RAM模块)
|
NEC Corp.
|
| MX25L1602 MX25L1602MC-50 |
16M-BIT [16M x 1] CMOS SERIAL FLASH EEPROM
|
Macronix International
|
| TC58FVB160-12 TC58FVB160-85 |
16M Bit (1M×16Bits ) CMOS NAND EEPROM(16M CMOS与非EEPROM) 1,600位（100万16位）的CMOS闪存EEPROM的（1,600 EEPROM中的CMOS与非
|
Toshiba Corporation
Toshiba, Corp.
|
| MBM29LV016T-80PTN MBM29LV016T-80PTR MBM29LV016B-80 |
16M (2M x 8) BIT 2M X 8 FLASH 3V PROM, 120 ns, PDSO40
16M (2M x 8) BIT 2M X 8 FLASH 3V PROM, 90 ns, PDSO40
16M (2M x 8) BIT 2M X 8 FLASH 3V PROM, 80 ns, PDSO40
630 V driver IC for CFL and
|
Fujitsu, Ltd.
Fujitsu Limited
http://
Fujitsu Component Limited.
|
| HM5164405FTT-5 HM5165405FTT-5 HM5164405FTT-6 HM516 |
16M x 4-bit EDO DRAM, 50ns
16M x 4-bit EDO DRAM, 60ns
|
Hitachi Semiconductor
|
| MBM29DL161BE MBM29DL161BE-12 MBM29DL161BE-70 MBM29 |
16M (2MX8/1MX16) BIT DUAL OPERATION
16M (2M X 8/1M X 16) BIT Dual Operation
|
FUJITSU[Fujitsu Media Devices Limited]
|
| K9F5608D0C K9F5608D0C-D K9F5608D0C-H K9F5608D0C-P |
32M x 8 Bit / 16M x 16 Bit NAND Flash Memory
512Mb/256Mb 1.8V NAND Flash Errata
32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| HYS72V32200GU HYS64V32200GU HYS72V64220GU HYS64V64 |
3.3 V 16M x 64/72-Bit SDRAM Modules 3.3 V 32M x 64/72-Bit SDRAM Modules 3.3 V 64M x 64/72-Bit SDRAM Modules 16M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, DMA168
Network Cable Assembly; Connector Type A:T568A/B Modular Plug; Connector Type B:T568A/B Modular Plug; Cable Length:15ft; Approval Categories:Augmented Category 6 standards; cord color per TIA/EIA-606 standard RoHS Compliant: Yes
|
Siemens Semiconductor G...
DRAM
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
